Open AccessA study on the epitaxial Bi2Se3 thin film grown by vapor phase epitaxy
Author(s) -
Yen-Cheng Lin,
Yu-Sung Chen,
Chao-Chun Lee,
Jen-Kai Wu,
HsinYen Lee,
ChiTe Liang,
Y. H. Chang
Publication year - 2016
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4954735
Subject(s) - epitaxy , thin film , materials science , substrate (aquarium) , chemical vapor deposition , transmission electron microscopy , analytical chemistry (journal) , scanning electron microscope , phase (matter) , deposition (geology) , diffraction , electron mobility , optoelectronics , crystallography , nanotechnology , chemistry , optics , layer (electronics) , composite material , physics , organic chemistry , paleontology , oceanography , chromatography , sediment , biology , geology
We report the growth of high quality Bi2Se3 thin films on Al2O3 substrates by using chemical vapor deposition. From the atomic force microscope, x-ray diffraction and transmission electron microscope measurements we found that the films are of good crystalline quality, have two distinct domains and can be grown epitaxially on the Al2O3 substrate. Carrier concentration in the sample is found to be 1.1 × 1019 cm−3 between T = 2 K to T = 300 K, and electron mobility can reach 954 cm2/V s at T = 2 K. Weak anti-localization effect is observed in the low temperature magneto-transport measurement for the sample which indicates that the thin film has topological surface state
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom