Open AccessElectrode-stress-induced nanoscale disorder in Si quantum electronic devices
Author(s) -
Jae K. Park,
Youngjun Ahn,
Jack A. Tilka,
Kevin Sampson,
D. E. Savage,
J. R. Prance,
C. B. Simmons,
M. G. Lagally,
S. N. Coppersmith,
M. A. Eriksson,
Martin V. Holt,
Paul G. Evans
Publication year - 2016
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.4954054
Subject(s) - materials science , heterojunction , nanoscopic scale , optoelectronics , electrode , doping , quantum dot , stress (linguistics) , quantum , nanotechnology , synchrotron , condensed matter physics , optics , physics , quantum mechanics , linguistics , philosophy
Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates. Quantitative analysis of synchrotron coherent hard x-ray nanobeam diffraction patterns reveals gate-induced curvature and strains up to 0.03% in a buried Si quantum well within a Si/SiGe heterostructure. Electrode stress presents both challenges to the design of devices and opportunities associated with the lateral manipulation of electronic energy levels
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