Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions | Zendy

Bhishma Pandit | Zendy; Tae Hoon Seo | Zendy; Beo Deul Ryu | Zendy; Jaehee Cho | Zendy

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Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions

Author(s) -

Bhishma Pandit,

Tae Hoon Seo,

Beo Deul Ryu,

Jaehee Cho

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4953917

Subject(s) - mole fraction , heterojunction , materials science , graphene , schottky barrier , schottky diode , optoelectronics , condensed matter physics , nanotechnology , chemistry , diode , physics

The current transport mechanism of graphene formed on AlxGa1−xN/GaN heterostructures with various Al mole fractions (x = 0.15, 0.20, 0.30, and 0.40) is investigated. The current–voltage measurement from graphene to AlGaN/GaN shows an excellent rectifying property. The extracted Schottky barrier height of the graphene/AlGaN/GaN contacts increases with the Al mole fraction in AlGaN. However, the current transport mechanism deviates from the Schottky-Mott theory owing to the deterioration of AlGaN crystal quality at high Al mole fractions confirmed by reverse leakage current measurement

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