Electric field effect thermoelectric transport in individual silicon and germanium/silicon nanowires | Zendy

Yuri M. Brovman | Zendy; Joshua P. Small | Zendy; Yongjie Hu | Zendy; Ying Fang | Zendy; Charles M. Lieber | Zendy; Philip Kim | Zendy

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Electric field effect thermoelectric transport in individual silicon and germanium/silicon nanowires

Author(s) -

Yuri M. Brovman,

Joshua P. Small,

Yongjie Hu,

Ying Fang,

Charles M. Lieber,

Philip Kim

Publication year - 2016

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.4953818

Subject(s) - materials science , germanium , silicon , nanowire , thermoelectric effect , subthreshold conduction , subthreshold slope , condensed matter physics , optoelectronics , field effect transistor , seebeck coefficient , electrical resistivity and conductivity , doping , saturation (graph theory) , strained silicon , transistor , voltage , electrical engineering , thermal conductivity , crystalline silicon , physics , thermodynamics , mathematics , combinatorics , amorphous silicon , composite material , engineering

We have simultaneously measured conductance and thermoelectric power (TEP) of individual silicon and germanium/silicon core/shell nanowires in the field effect transistor device configuration. As the applied gate voltage changes, the TEP shows distinctly different behaviors while the electrical conductance exhibits the turn-off, subthreshold, and saturation regimes, respectively. At room temperature, peak TEP value of ∼300 μV/K is observed in the subthreshold regime of the Si devices. The temperature dependence of the saturated TEP values is used to estimate the carrier doping of Si nanowires.

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