HgNO3 sensitivity of AlGaN/GaN field effect transistors functionalized with phytochelating peptides | Zendy

Nathaniel Rohrbaugh | Zendy; Luis H. Hernandez-Balderrama | Zendy; Felix Kaess | Zendy; Ronny Kirste | Zendy; Ramón Collazo | Zendy; Albena Ivanisevic | Zendy

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HgNO₃ sensitivity of AlGaN/GaN field effect transistors functionalized with phytochelating peptides

Author(s) -

Nathaniel Rohrbaugh,

Luis H. Hernandez-Balderrama,

Felix Kaess,

Ronny Kirste,

Ramón Collazo,

Albena Ivanisevic

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4953806

Subject(s) - materials science , field effect transistor , conductance , transistor , optoelectronics , sensitivity (control systems) , covalent bond , wide bandgap semiconductor , peptide , analytical chemistry (journal) , chemistry , electronic engineering , condensed matter physics , voltage , chromatography , electrical engineering , biochemistry , physics , organic chemistry , engineering

This study examined the conductance sensitivity of AlGaN/GaN field effect transistors in response to varying Hg/HNO3 solutions. FET surfaces were covalently functionalized with phytochelatin-5 peptides in order to detect Hg in solution. Results showed a resilience of peptide-AlGaN/GaN bonds in the presence of strong HNO3 aliquots, with significant degradation in FET ID signal. However, devices showed strong and varied response to Hg concentrations of 1, 10, 100, and 1000 ppm. The gathered statistically significant results indicate that peptide terminated AlGaN/GaN devices are capable of differentiating between Hg solutions and demonstrate device sensitivity

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