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Electrical and thermal transports of binary copper sulfides CuxS with x from 1.8 to 1.96
Author(s) -
Pengfei Qiu,
Yaqin Zhu,
Yuting Qin,
Xun Shi,
Lidong Chen
Publication year - 2016
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.4953439
Subject(s) - copper , valence (chemistry) , seebeck coefficient , materials science , thermoelectric effect , electrical resistivity and conductivity , crystal structure , figure of merit , crystallography , thermal conductivity , analytical chemistry (journal) , metallurgy , thermodynamics , chemistry , composite material , physics , optoelectronics , organic chemistry , chromatography , quantum mechanics
In this study, a series of copper sulfides CuxS with x spanning from 1.8 to 1.96 was prepared and their crystal structures, elemental valence states, and thermoelectric properties were systematically studied. The valence state of Cu in CuxS is unchanged as the ratio of Cu/S varies, while the thermoelectric properties are very sensitive to the deficiency of Cu. In addition, the type of sulfur arrangement in the crystal structure also plays an important role on the electrical transports. Finally, the optimum Cu/S atomic ratios in the binary CuxS system were identified for high power factor and thermoelectric figure of merit

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