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High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics
Author(s) -
Young Ki Hong,
Geonwook Yoo,
Junyeon Kwon,
Seongin Hong,
Won Geun Song,
Na Liu,
I. Omkaram,
Byungwook Yoo,
Sanghyun Ju,
Sunkook Kim,
Min Suk Oh
Publication year - 2016
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4953062
Subject(s) - materials science , optoelectronics , thin film transistor , schottky barrier , work function , electrode , transistor , molybdenum disulfide , transmittance , layer (electronics) , nanotechnology , composite material , electrical engineering , voltage , chemistry , diode , engineering
Various strategies and mechanisms have been suggested for investigating a Schottkycontact behavior in molybdenum disulfide (MoS2) thin-film transistor(TFT), which are still in much debate and controversy. As one of promisingbreakthrough for transparent electronics with a high device performance, we haverealized MoS2 TFTs with source/drain electrodes consisting of transparentbi-layers of a conducting oxide over a thin film of low work function metal.Intercalation of a low work function metal layer, such as aluminum, betweenMoS2 and transparent source/drain electrodes makes it possible tooptimize the Schottky contact characteristics, resulting in about 24-fold and 3orders of magnitude enhancement of the field-effect mobility and on-off currentratio, respectively, as well as transmittance of 87.4 % in the visible wavelengthrange

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