Open AccessOptical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices
Author(s) -
Preston T. Webster,
Arvind J. Shalindar,
Nathaniel A. Riordan,
Chaturvedi Gogineni,
H. Liang,
Arvind Sharma,
S. R. Johnson
Publication year - 2016
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4953027
Subject(s) - superlattice , molecular beam epitaxy , band gap , materials science , photoluminescence , semiconductor , optoelectronics , ellipsometry , condensed matter physics , direct and indirect band gaps , epitaxy , thin film , physics , nanotechnology , layer (electronics)
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