Thermally stable pn-junctions based on a single transparent perovskite semiconductor BaSnO3 | Zendy

Hoon Min Kim | Zendy; Useong Kim | Zendy; Chulkwon Park | Zendy; Hyukwoo Kwon | Zendy; K. Char | Zendy

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Thermally stable pn-junctions based on a single transparent perovskite semiconductor BaSnO3

Author(s) -

Hoon Min Kim,

Useong Kim,

Chulkwon Park,

Hyukwoo Kwon,

K. Char

Publication year - 2016

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4952609

Subject(s) - materials science , doping , dopant , semiconductor , p–n junction , optoelectronics , perovskite (structure) , activation energy , dopant activation , junction temperature , condensed matter physics , thermal , crystallography , chemistry , physics , meteorology

We report p-doping of the BaSnO3 (BSO) by replacing Ba with K. The activation energy of K-dopants is estimated to be about 0.5 eV. We have fabricated pn junctions by using K-doped BSO as a p-type and La-doped BSO as an n-type semiconductor. I-V characteristics of these devices exhibit an ideal rectifying behavior of pn junctions with the ideality factor between 1 and 2, implying high integrity of the BSO materials. Moreover, the junction properties are found to be very stable after repeated high-bias and high-temperature thermal cycling, demonstrating a large potential for optoelectronic functions

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