Erratum: “Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors” [Appl. Phys. Lett. 106, 103109 (2015)] | Zendy

Yao Guo | Zendy; Xianlong Wei | Zendy; Jiapei Shu | Zendy; Bo Liu | Zendy; Jianbo Yin | Zendy; Changrong Guan | Zendy; Yuxiang Han | Zendy; Song Gao | Zendy; Qing Chen | Zendy

Open Access

Erratum: “Charge trapping at the MoS₂-SiO₂ interface and its effects on the characteristics of MoS₂ metal-oxide-semiconductor field effect transistors” [Appl. Phys. Lett. 106, 103109 (2015)]

Author(s) -

Yao Guo,

Xianlong Wei,

Jiapei Shu,

Bo Liu,

Jianbo Yin,

Changrong Guan,

Yuxiang Han,

Song Gao,

Qing Chen

Publication year - 2016

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4952406

Subject(s) - trapping , materials science , field effect transistor , semiconductor , optoelectronics , transistor , interface (matter) , metal , oxide , silicon , charge (physics) , mosfet , engineering physics , nanotechnology , electrical engineering , physics , metallurgy , engineering , ecology , capillary number , voltage , quantum mechanics , capillary action , composite material , biology

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