Improved reset breakdown strength in a HfOx-based resistive memory by introducing RuOx oxygen diffusion barrier | Zendy

Jaesung Park | Zendy; Jiyong Woo | Zendy; Amit Prakash | Zendy; Sangheon Lee | Zendy; Seokjae Lim | Zendy; Hyunsang Hwang | Zendy

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Improved reset breakdown strength in a HfOx-based resistive memory by introducing RuOx oxygen diffusion barrier

Author(s) -

Jaesung Park,

Jiyong Woo,

Amit Prakash,

Sangheon Lee,

Seokjae Lim,

Hyunsang Hwang

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4950966

Subject(s) - materials science , electrode , reset (finance) , stack (abstract data type) , oxygen , diffusion barrier , diffusion , resistive random access memory , resistive touchscreen , optoelectronics , composite material , electrical engineering , layer (electronics) , chemistry , computer science , thermodynamics , engineering , programming language , physics , organic chemistry , financial economics , economics

We investigated the reset breakdown phenomenon of HfOx-based resistive memory for reliable switching operation in a fully CMOS compatible stack. Through the understanding on the effect of electrode materials and device area, our findings show that observed failure is attributed to additional oxygen vacancies close to the electrode interface, where switching is occurred. Therefore, RuOx serving as an oxygen diffusion barrier was introduced to suppress the generation of unwanted oxygen vacancies by preventing out-diffusion of oxygen through the electrode. As a result, significantly enhanced breakdown strength in HfOx/RuOx stack is achieved and resulting in improved cycle endurance with larger on/off ratio

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