Enhanced photo/electroluminescence properties of Eu-doped GaN through optimization of the growth temperature and Eu related defect environment | Zendy

Wanxin Zhu | Zendy; Brandon Mitchell | Zendy; Dolf Timmerman | Zendy; Akira Uedono | Zendy; A. Koizumi | Zendy; Y. Fujiwara | Zendy

Open Access

Enhanced photo/electroluminescence properties of Eu-doped GaN through optimization of the growth temperature and Eu related defect environment

Author(s) -

Wanxin Zhu,

Brandon Mitchell,

Dolf Timmerman,

Akira Uedono,

A. Koizumi,

Y. Fujiwara

Publication year - 2016

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4950826

Subject(s) - materials science , electroluminescence , doping , luminescence , optoelectronics , epitaxy , light emitting diode , ion , vapor phase , analytical chemistry (journal) , nanotechnology , chemistry , layer (electronics) , physics , chromatography , organic chemistry , thermodynamics

The influence of growth temperature on the surface morphology and luminescence properties of Eu-doped GaN layers grown by organometallic vapor phase epitaxy was investigated. By using a Eu source that does not contain oxygen in its molecular structure, and varying the growth temperature, the local defect environment around the Eu3+ ions was manipulated, yielding a higher emission intensity from the Eu3+ ions and a smoother sample surface. The optimal growth temperature was determined to be 960 °C and was used to fabricate a GaN-based red light-emitting diode with a significantly higher output power

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