z-logo
open-access-imgOpen Access
Chromium–niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal–insulator transition
Author(s) -
K. Miyazaki,
Keisuke Shibuya,
Megumi Suzuki,
Kenichi Sakai,
Junichi Fujita,
Akihito Sawa
Publication year - 2016
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4949757
Subject(s) - materials science , niobium , vanadium , doping , chromium , thermal hysteresis , hysteresis , temperature coefficient , metal–insulator transition , analytical chemistry (journal) , electrical resistivity and conductivity , transition temperature , condensed matter physics , metal , superconductivity , metallurgy , composite material , phase transition , chemistry , optoelectronics , electrical engineering , physics , engineering , chromatography
We investigated the effects of chromium (Cr) and niobium(Nb) co-doping on the temperature coefficient of resistance (TCR) and the thermal hysteresis of the metal–insulator transition of vanadium dioxide (VO2) films. We determined the TCR and thermal-hysteresis-width diagram of the V1−x−yCrxNbyO2films by electrical-transport measurements and we found that the doping conditions x ≳ y and x + y ≥ 0.1 are appropriate for simultaneously realizing a large TCR value and an absence of thermal hysteresis in the films. By using these findings, we developed a V0.90Cr0.06Nb0.04O2filmgrown on a TiO2-buffered SiO2/Si substrate that showed practically no thermal hysteresis while retaining a large TCR of 11.9%/K. This study has potential applications in the development of VO2-based uncooled bolometers

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom