Chromium–niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal–insulator transition
Author(s) -
K. Miyazaki,
Keisuke Shibuya,
Megumi Suzuki,
Kenichi Sakai,
Junichi Fujita,
Akihito Sawa
Publication year - 2016
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4949757
Subject(s) - materials science , niobium , vanadium , doping , chromium , thermal hysteresis , hysteresis , temperature coefficient , metal–insulator transition , analytical chemistry (journal) , electrical resistivity and conductivity , transition temperature , condensed matter physics , metal , superconductivity , metallurgy , composite material , phase transition , chemistry , optoelectronics , electrical engineering , physics , engineering , chromatography
We investigated the effects of chromium (Cr) and niobium(Nb) co-doping on the temperature coefficient of resistance (TCR) and the thermal hysteresis of the metal–insulator transition of vanadium dioxide (VO2) films. We determined the TCR and thermal-hysteresis-width diagram of the V1−x−yCrxNbyO2films by electrical-transport measurements and we found that the doping conditions x ≳ y and x + y ≥ 0.1 are appropriate for simultaneously realizing a large TCR value and an absence of thermal hysteresis in the films. By using these findings, we developed a V0.90Cr0.06Nb0.04O2filmgrown on a TiO2-buffered SiO2/Si substrate that showed practically no thermal hysteresis while retaining a large TCR of 11.9%/K. This study has potential applications in the development of VO2-based uncooled bolometers
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