Richardson-Schottky transport mechanism in ZnS nanoparticles | Zendy

Hassan Ali | Zendy; Usman Khan | Zendy; M. A. Rafiq | Zendy; Attia Falak | Zendy; Adeela Narain | Zendy; Jing Tang | Zendy; Xiulai Xu | Zendy

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Richardson-Schottky transport mechanism in ZnS nanoparticles

Author(s) -

Hassan Ali,

Usman Khan,

M. A. Rafiq,

Attia Falak,

Adeela Narain,

Jing Tang,

Xiulai Xu

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4948982

Subject(s) - schottky diode , schottky barrier , materials science , dielectric , temperature coefficient , atmospheric temperature range , thermal conduction , poole–frenkel effect , semiconductor , condensed matter physics , nanoparticle , conductance , schottky effect , nanotechnology , optoelectronics , thermodynamics , diode , physics , composite material

We report the synthesis and electrical transport mechanism in ZnS semiconductor nanoparticles. Temperature dependent direct current transport measurements on the compacts of ZnS have been performed to investigate the transport mechanism for temperature ranging from 300 K to 400 K. High frequency dielectric constant has been used to obtain the theoretical values of Richardson-Schottky and Poole-Frenkel barrier lowering coefficients. Experimental value of the barrier lowering coefficient has been calculated from conductance-voltage characteristics. The experimental value of barrier lowering coefficient βexp lies close to the theoretical value of Richardson-Schottky barrier lowering coefficient βth,RS showing Richardson-Schottky emission has been responsible for conduction in ZnS nanoparticles for the temperature range studied

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