Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material | Zendy

Tuan T. Tran | Zendy; David Pastor | Zendy; Hemi H. Gandhi | Zendy; Lachlan Smillie | Zendy; Austin J. Akey | Zendy; Michael J. Aziz | Zendy; J. S. Williams | Zendy

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Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material

Author(s) -

Tuan T. Tran,

David Pastor,

Hemi H. Gandhi,

Lachlan Smillie,

Austin J. Akey,

Michael J. Aziz,

J. S. Williams

Publication year - 2016

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.4948960

Subject(s) - materials science , band gap , direct and indirect band gaps , raman spectroscopy , germanium , rutherford backscattering spectrometry , pulsed laser deposition , tin , analytical chemistry (journal) , alloy , ellipsometry , ion implantation , semiconductor , optoelectronics , thin film , ion , chemistry , silicon , nanotechnology , optics , metallurgy , physics , organic chemistry , chromatography

Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material

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