Temperature-dependent dielectric and energy-storage properties of Pb(Zr,Sn,Ti)O3 antiferroelectric bulk ceramics
Author(s) -
Xuefeng Chen,
Zhen Liu,
Chenhong Xu,
Fei Cao,
Genshui Wang,
Xianlin Dong
Publication year - 2016
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4948915
Subject(s) - antiferroelectricity , materials science , dielectric , ceramic , phase boundary , hysteresis , ferroelectricity , condensed matter physics , ferroelectric ceramics , phase (matter) , dielectric loss , analytical chemistry (journal) , optoelectronics , composite material , chemistry , physics , organic chemistry , chromatography
The dielectric and energy-storage properties of Pb0.99Nb0.02[(Zr0.60Sn0.40)0.95Ti0.05]0.98O3 (PNZST) bulk ceramics near the antiferroelectric (AFE)-ferroelectric (FE) phase boundary are investigated as a function of temperature. Three characteristic temperatures T0, TC, T2 are obtained from the dielectric temperature spectrum. At different temperature regions (below T0, between T0 and TC, and above TC), three types of hysteresis loops are observed as square double loop, slim loop and linear loop, respectively. The switching fields and recoverable energy density all first increase and then decrease with increasing temperature, and reach their peak values at ∼T0. These results provide a convenient method to optimize the working temperature of antiferroelectric electronic devices through testing the temperature dependent dielectric properties of antiferroelectric ceramics
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