Charge storage and tunneling mechanism of Ni nanocrystals embedded HfOx film | Zendy

Huaxing Zhu | Zendy; Tongchao Zhang | Zendy; Rihua Wang | Zendy; Yiaobo Zhang | Zendy; L. T. Li | Zendy; Xiaoyan Qiu | Zendy

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Charge storage and tunneling mechanism of Ni nanocrystals embedded HfOx film

Author(s) -

Huaxing Zhu,

Tongchao Zhang,

Rihua Wang,

Yiaobo Zhang,

L. T. Li,

Xiaoyan Qiu

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4948751

Subject(s) - materials science , quantum tunnelling , nanocrystal , optoelectronics , amorphous solid , capacitor , capacitance , electron , sputter deposition , hysteresis , voltage , nanotechnology , sputtering , electrical engineering , electrode , thin film , condensed matter physics , crystallography , chemistry , physics , engineering , quantum mechanics

A nano-floating gate memory structure based on Ni nanocrystals (NCs) embedded HfOx film is deposited by means of radio-frequency magnetron sputtering. Microstructure investigations reveal that self-organized Ni-NCs with diameters of 4-8 nm are well dispersed in amorphous HfOx matrix. Pt/Ni-NCs embedded HfOx/Si/Ag capacitor structures exhibit voltage-dependent capacitance-voltage hysteresis, and a maximum flat-band voltage shift of 1.5 V, corresponding to a charge storage density of 6.0 × 1012 electrons/cm2, is achieved. These capacitor memory cells exhibit good endurance characteristic up to 4 × 104 cycles and excellent retention performance of 105 s, fulfilling the requirements of next generation non-volatile memory devices. Schottky tunneling is proven to be responsible for electrons tunneling in these capacitors

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