Open AccessPublisher's Note: “Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors” [Appl. Phys. Lett. 108, 141604 (2016)]
Author(s) -
Saeroonter Oh,
Ju Heyuck Baeck,
Jong Uk Bae,
KwonShik Park,
In Byeong Kang
Publication year - 2016
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4947573
Subject(s) - instability , thin film transistor , stress (linguistics) , materials science , transistor , condensed matter physics , thin film , oxygen , nanotechnology , physics , mechanics , quantum mechanics , layer (electronics) , philosophy , linguistics , voltage
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