Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy | Zendy

Takuya Kawazu | Zendy; Takeshi Noda | Zendy; Yoshiki Sakuma | Zendy; H. Sakaki | Zendy

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Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy

Author(s) -

Takuya Kawazu,

Takeshi Noda,

Yoshiki Sakuma,

H. Sakaki

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4947464

Subject(s) - photoluminescence , wetting layer , quantum dot , luminescence , annealing (glass) , excitation , materials science , epitaxy , analytical chemistry (journal) , photoluminescence excitation , spectral line , molecular beam epitaxy , optoelectronics , condensed matter physics , chemistry , layer (electronics) , nanotechnology , physics , quantum mechanics , chromatography , astronomy , composite material

We investigated the excitation power P dependence of photoluminescence (PL) spectra of GaSb type-II quantum dots (QDs) in GaAs grown by droplet epitaxy. We prepared two QD samples annealed at slightly different temperatures (380 oC and 400 oC) and carried out PL measurements. The 20 oC increase of the annealing temperature leads to (1) about 140 and 60 times stronger wetting layer (WL) luminescence at low and high P, (2) about 45% large energy shift of QD luminescence with P, and (3) the different P dependence of the PL intensity ratio between the QD and the WL. These differences of the PL characteristics are explained by the effects of the WL

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