Open AccessHigh-current operation of vertical-type organic transistor with preferentially oriented molecular film
Author(s) -
Hirohiko Fukagawa,
Yasuyuki Watanabe,
Kazuhiro Kudo,
Jun-ichi Nishida,
Yoshiro Yamashita,
Hideo Fujikake,
Shizuo Tokito,
Toshihiro Yamamoto
Publication year - 2016
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4947203
Subject(s) - stacking , transistor , materials science , monolayer , substrate (aquarium) , optoelectronics , current (fluid) , layer (electronics) , thin film transistor , current density , organic semiconductor , molecule , voltage , nanotechnology , chemistry , electrical engineering , organic chemistry , physics , engineering , oceanography , quantum mechanics , geology
A high-performance vertical-type organic transistor has been fabricated using bis(l,2,5-thiadiazolo)-p-quinobis(l,3-dithiole) (BTQBT) for the channel layer. The BTQBT molecules are oriented horizontally, with the molecular plane of each monolayer parallel to the substrate. The π–π stacking direction of the BTQBT molecules is aligned with the carrier transport direction in this vertical transistor. The modulated drain current density exceeded 1 A cm−2 upon the application of a gate voltage of less than 5 V. In addition, the device exhibits a high on/off current ratio of over 105
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