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Films with a structure of Ta (5 nm)/Co20Fe60B20 (0.8–1.5 nm)/MgO (1 nm)/Ta (1 nm) were deposited on Corning glass substrates by magnetron sputtering. The as-deposited films with CoFeB layer thickness from 0.8 to 1.3 nm show perpendicular magnetic anisotropy (PMA). After annealing at a proper temperature, the PMA of the films can be enhanced remarkably. A maximum effective anisotropy field of up to 9 kOe was obtained for 1.0- and 1.1-nm-thick CoFeB layers annealed at an optimum temperature of 300 °C. A 4-kOe magnetic field was applied during annealing to study its effect on the PMA of the CoFeB layers. The results confirmed that applying a perpendicular magnetic field during annealing did not improve the maximum PMA of the films, but it did enhance the PMA of the thinner films at a lower annealing temperature

Effect of annealing conditions on the perpendicular magnetic anisotropy of Ta/CoFeB/MgO multilayers