Tunneling anisotropic magnetoresistance in La2/3Sr1/3MnO3/LaAlO3/Pt tunnel junctions | Zendy

Regina Galceran | Zendy; Ll. Balcells | Zendy; A. Pomar | Zendy; Z. Konstantinović | Zendy; Núria Bagués | Zendy; F. Sandiumenge | Zendy; B. Martı́nez | Zendy

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Tunneling anisotropic magnetoresistance in La2/3Sr1/3MnO3/LaAlO3/Pt tunnel junctions

Author(s) -

Regina Galceran,

Ll. Balcells,

A. Pomar,

Z. Konstantinović,

Núria Bagués,

F. Sandiumenge,

B. Martı́nez

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4946851

Subject(s) - condensed matter physics , magnetoresistance , quantum tunnelling , anisotropy , materials science , colossal magnetoresistance , tunnel magnetoresistance , magnetic anisotropy , magnetic field , magnetization , ferromagnetism , physics , quantum mechanics

The magnetotransport properties of La2/3Sr1/3MnO3(LSMO)/ LaAlO3(LAO)/Pt tunneling junctions have been analyzed as a function of temperature and magnetic field. The junctions exhibit magnetoresistance (MR) values of about 37%, at H=90 kOe at low temperature. However, the temperature dependence of MR indicates a clear distinct origin than that of conventional colossal MR. In addition, tunneling anisotropic MR (TAMR) values around 4% are found at low temperature and its angular dependence reflects the expected uniaxial anisotropy. The use of TAMR response could be an alternative of much easier technological implementation than conventional MTJs since only one magnetic electrode is required, thus opening the door to the implementation of more versatile devices. However, further studies are required in order to improve the strong temperature dependence at the present stage

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