z-logo
open-access-imgOpen Access
Tuning exciton energy and fine-structure splitting in single InAs quantum dots by applying uniaxial stress
Author(s) -
Dan Su,
Xiuming Dou,
Xuefei Wu,
Yongping Liao,
Pengyu Zhou,
Kun Ding,
Haiqiao Ni,
Zhichuan Niu,
Haijun Zhu,
Desheng Jiang,
Baoquan Sun
Publication year - 2016
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4946850
Subject(s) - biexciton , exciton , quantum dot , binding energy , fine structure , materials science , condensed matter physics , stress (linguistics) , photoluminescence , molecular physics , atomic physics , optoelectronics , physics , linguistics , philosophy
Exciton and biexciton emission energies as well as excitonic fine-structure splitting (FSS) in single InAs/GaAs quantum dots (QDs) have been continuously tuned in situ in an optical cryostat using a developed uniaxial stress device. With increasing tensile stress, the red shift of excitonic emission is up to 5 nm; FSS decreases firstly and then increases monotonically, reaching a minimum value of approximately 10 μeV; biexciton binding energy decreases from 460 to 106 μeV. This technique provides a simple and convenient means to tune QD structural symmetry, exciton energy and biexciton binding energy and can be used for generating entangled and indistinguishable photons

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom