Open AccessSubstantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity
Author(s) -
Tomohiro Inaba,
D. Lee,
Ryuta Wakamatsu,
Takanori Kojima,
Brandon Mitchell,
Antonio Capretti,
T. Gregorkiewicz,
Atsushi Koizumi,
Yasufumi Fujiwara
Publication year - 2016
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4946849
Subject(s) - photoluminescence , materials science , optoelectronics , doping , excited state , wide bandgap semiconductor , emission intensity , intensity (physics) , distributed bragg reflector , piezoelectricity , excitation , optics , atomic physics , physics , wavelength , quantum mechanics , composite material
We investigate resonantly excited photoluminescence from a Eu,O-codoped GaN layer embedded into a microcavity, consisting of an AlGaN/GaN distributed Bragg reflector and a Ag reflecting mirror. The microcavity is responsible for a 18.6-fold increase of the Eu emission intensity at ∼10K, and a 21-fold increase at room temperature. We systematically investigate the origin of this enhancement, and we conclude that it is due to the combination of several effects including, the lifetime shortening of the Eu emission, the strain-induced piezoelectric effect, and the increased extraction and excitation field efficiencies. This study paves the way for an alternative method to enhance the photoluminescence intensity in rare-earth doped semiconductor structures
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