Effect of doping on the electron transport in polyfluorene | Zendy

Manisha Bajpai | Zendy; Ritu Srivastava | Zendy; Ravindra Dhar | Zendy; Rudramani Tiwari | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Effect of doping on the electron transport in polyfluorene

Author(s) -

Manisha Bajpai,

Ritu Srivastava,

Ravindra Dhar,

Rudramani Tiwari

Publication year - 2016

Publication title -

aip conference proceedings

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.177

H-Index - 75

eISSN - 1551-7616

pISSN - 0094-243X

DOI - 10.1063/1.4946720

Subject(s) - materials science , doping , ohmic contact , dopant , electron mobility , condensed matter physics , conductivity , electron , charge carrier density , charge carrier , space charge , thermal conduction , electrical resistivity and conductivity , optoelectronics , nanotechnology , chemistry , composite material , physics , layer (electronics) , quantum mechanics

In this paper, electron transport of pure and DMC doped polyfluorne (PF) films have been studied at various doping concentrations. Pure films show space charge limited conduction with field and temperature dependent mobility. The J–V characteristics of doped PF were ohmic at low voltages due to thermally released carriers from dopant states. At higher voltages the current density increases nonlinearly due to field dependent mobility and carrier concentration thereby filling of tail states of HOMO of the host. The conductivity of doped fims were analyzed using the Unified Gaussian Disorder Model (UGDM). The carrier concentration obtained from the fitting show a non-linear dependence on doping concentration which may be due to a combined effect of thermally activated carrier generation and increased carrier mobility.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research