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Optical and electrical properties of polycrystalline and amorphous Al-Ti thin films
Author(s) -
Stela Canulescu,
Camelia N. Borca,
Kristian Rechendorff,
Svava Davíðsdóttir,
Klaus Pagh Almtoft,
Lars Nielsen,
Jørgen Schou
Publication year - 2016
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4945769
Subject(s) - materials science , amorphous solid , crystallite , thin film , molar absorptivity , electrical resistivity and conductivity , refractive index , sputter deposition , grain boundary , analytical chemistry (journal) , scattering , sputtering , condensed matter physics , optics , optoelectronics , crystallography , microstructure , metallurgy , nanotechnology , chemistry , physics , chromatography , electrical engineering , engineering
The structural, optical, and transport properties of sputter-deposited Al-Ti thin films have been investigated as a function of Ti alloying with a concentration ranging from 2% to 46%. The optical reflectivity of Al-Ti films at visible and near-infrared wavelengths decreases with increasing Ti content. X-ray absorption fine structure measurements reveal that the atomic ordering around Ti atoms increases with increasing Ti content up to 20% and then decreases as a result of a transition from a polycrystalline to amorphous structure. The transport properties of the Al-Ti films are influenced by electron scattering at the grain boundaries in the case of polycrystalline films and static defects, such as anti-site effects and vacancies in the case of the amorphous alloys. The combination of Ti having a real refractive index (n) comparable with the extinction coefficient (k) and Al with n much smaller than k allows us to explore the parameter space for the free-electron behavior in transition metal-Al alloys. T...

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