Carrier tuning the metal-insulator transition of epitaxial La0.67Sr0.33MnO3 thin film on Nb doped SrTiO3 substrate | Zendy

J. M. Zhan | Zendy; P. G. Li | Zendy; H. Liu | Zendy; Sheng Tao | Zendy; He Ma | Zendy; Jingqin Shen | Zendy; Mingyan Pan | Zendy; Zuxian Zhang | Zendy; S. L. Wang | Zendy; G. L. Yuan | Zendy

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Carrier tuning the metal-insulator transition of epitaxial La0.67Sr0.33MnO3 thin film on Nb doped SrTiO3 substrate

Author(s) -

J. M. Zhan,

P. G. Li,

H. Liu,

Sheng Tao,

He Ma,

Jingqin Shen,

Mingyan Pan,

Zuxian Zhang,

S. L. Wang,

G. L. Yuan

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4945694

Subject(s) - materials science , doping , redistribution (election) , thin film , epitaxy , electric field , metal–insulator transition , condensed matter physics , substrate (aquarium) , optoelectronics , nanotechnology , metal , layer (electronics) , metallurgy , quantum mechanics , politics , political science , oceanography , physics , geology , law

La0.67Sr0.33MnO3 (LSMO) thin films were deposited on (001)SrTiO3(STO) and n-type doped Nb:SrTiO3(NSTO) single crystal substrates respectively. The metal to insulator transition temperature(TMI) of LSMO film on NSTO is lower than that on STO, and the TMI of LSMO can be tuned by changing the applied current in the LSMO/NSTO p-n junction. Such behaviors were considered to be related to the carrier concentration redistribution in LSMO film caused by the change of depletion layer thickness in p-n junction which depends greatly on the applied electric field. The phenomenon could be used to configure artificial devices and exploring the underlying physics

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