Open AccessEpitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility
Author(s) -
Reynald Alcotte,
M. Martin,
J. Moeyaert,
R. Cipro,
Sylvain David,
F. Bassani,
F. Ducroquet,
Y. Bogumilowicz,
E. Sánchez,
Z. Ye,
Xinyu Bao,
Jean-Baptiste Pin,
T. Baron
Publication year - 2016
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.4945586
Subject(s) - epitaxy , materials science , chemical vapor deposition , wafer , metalorganic vapour phase epitaxy , optoelectronics , layer (electronics) , substrate (aquarium) , photoluminescence , thin film , hall effect , electron mobility , deposition (geology) , silicon , electrical resistivity and conductivity , nanotechnology , electrical engineering , paleontology , oceanography , engineering , sediment , geology , biology
Metal organic chemical vapor deposition of GaAs on standard nominal 300 mm Si(001) wafers was studied. Antiphase boundary (APB) free epitaxial GaAs films as thin as 150 nm were obtained. The APB-free films exhibit an improvement of the room temperature photoluminescence signal with an increase of the intensity of almost a factor 2.5. Hall effect measurements show an electron mobility enhancement from 200 to 2000 cm2/V s. The GaAs layers directly grown on industrial platform with no APBs are perfect candidates for being integrated as active layers for nanoelectronic as well as optoelectronic devices in a CMOS environment
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