A comparative study on charge carrier recombination across the junction region of Cu2ZnSn(S,Se)4 and Cu(In,Ga)Se2 thin film solar cells | Zendy

Mohammad Abdul Halim | Zendy; Muhammad Monirul Islam | Zendy; Xianjia Luo | Zendy; T. Sakurai | Zendy; Noriyuki Sakai | Zendy; Takuya Kato | Zendy; H. Sugimoto | Zendy; Hitoshi Tampo | Zendy; Hajime Shibata | Zendy; Shigeru Niki | Zendy; Katsuhiro Akimoto | Zendy

Open Access

A comparative study on charge carrier recombination across the junction region of Cu2ZnSn(S,Se)4 and Cu(In,Ga)Se2 thin film solar cells

Author(s) -

Mohammad Abdul Halim,

Muhammad Monirul Islam,

Xianjia Luo,

T. Sakurai,

Noriyuki Sakai,

Takuya Kato,

H. Sugimoto,

Hitoshi Tampo,

Hajime Shibata,

Shigeru Niki,

Katsuhiro Akimoto

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4944911

Subject(s) - copper indium gallium selenide solar cells , materials science , non radiative recombination , photoluminescence , recombination , carrier lifetime , charge carrier , optoelectronics , electroluminescence , solar cell , semiconductor , chemistry , semiconductor materials , nanotechnology , silicon , biochemistry , layer (electronics) , gene

A comparative study with focusing on carrier recombination properties in Cu2ZnSn(S,Se)4 (CZTSSe) and the CuInGaSe2 (CIGS) solar cells has been carried out. For this purpose, electroluminescence (EL) and also bias-dependent time resolved photoluminescence (TRPL) using femtosecond (fs) laser source were performed. For the similar forward current density, the EL-intensity of the CZTSSe sample was obtained significantly lower than that of the CIGS sample. Primarily, it can be attributed to the existence of excess amount of non-radiative recombination center in the CZTSSe, and/or CZTSSe/CdS interface comparing to that of CIGS sample. In case of CIGS sample, TRPL decay time was found to increase with the application of forward-bias. This can be attributed to the reduced charge separation rate resulting from the reduced electric-field at the junction. However, in CZTSSe sample, TRPL decay time has been found almost independent under the forward and reverse-bias conditions. This phenomenon indicates that the charge recombination rate strongly dominates over the charge separation rate across the junction of the CZTSSe sample. Finally, temperature dependent VOC suggests that interface related recombination in the CZTSSe solar cell structure might be one of the major factors that affect EL-intensity and also, TRPL decay curves

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