Visible-blind and solar-blind ultraviolet photodiodes based on (InxGa1−x)2O3 | Zendy

Zhipeng Zhang | Zendy; Holger von Wenckstern | Zendy; J. Lenzner | Zendy; Michael Lorenz | Zendy; Marius Grundmann | Zendy

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Visible-blind and solar-blind ultraviolet photodiodes based on (InxGa1−x)2O3

Author(s) -

Zhipeng Zhang,

Holger von Wenckstern,

J. Lenzner,

Michael Lorenz,

Marius Grundmann

Publication year - 2016

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4944860

Subject(s) - photodiode , materials science , ultraviolet , optoelectronics , indium , absorption (acoustics) , optics , doping , solar cell , thin film , layer (electronics) , signal (programming language) , semiconductor , physics , nanotechnology , composite material , computer science , programming language

UV and deep-UV selective photodiodes from visible-blind to solar-blind were realized based on a Si-doped (InxGa1–x)2O3 thin film with a monotonic lateral variation of 0.0035 < x < 0.83. Such layer was deposited by employing a continuous composition spread approach relying on the ablation of a single segmented target in pulsed-laser deposition. The photo response signal is provided from a metal-semiconductor-metal structure upon backside illumination. The absorption onset was tuned from 4.83 to 3.22 eV for increasing x. Higher responsivities were observed for photodiodes fabricated from indium-rich part of the sample, for which an internal gain mechanism could be identified.

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