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Poly(4-vinylphenol) gate insulator with cross-linking using a rapid low-power microwave induction heating scheme for organic thin-film-transistors
Author(s) -
Ching-Lin Fan,
Ming-Chi Shang,
Mao-Yuan Hsia,
Shea-Jue Wang,
BohrRan Huang,
Win-Der Lee
Publication year - 2016
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.4944748
Subject(s) - materials science , microwave , insulator (electricity) , optoelectronics , thin film transistor , transistor , induction heating , thin film , microwave heating , layer (electronics) , nanotechnology , electrical engineering , physics , engineering , quantum mechanics , voltage , electromagnetic coil
A Microwave-Induction Heating (MIH) scheme is proposed for the poly(4-vinylphenol) (PVP) gate insulator cross-linking process to replace the traditional oven heating cross-linking process. The cross-linking time is significantly decreased from 1 h to 5 min by heating the metal below the PVP layer using microwave irradiation. The necessary microwave power was substantially reduced to about 50 W by decreasing the chamber pressure. The MIH scheme is a good candidate to replace traditional thermal heating for cross-linking of PVP as the gate insulator for organic thin-film-transistors

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