Open AccessEnhancing the performance of blue GaN-based light emitting diodes with carrier concentration adjusting layer
Author(s) -
Yao Guo,
Zhiqiang Liu,
Yang Huang,
Xiaoyan Yi,
Junxi Wang,
Guohong Wang,
Jinmin Li
Publication year - 2016
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4944624
Subject(s) - voltage droop , optoelectronics , materials science , diode , light emitting diode , spontaneous emission , quantum efficiency , wide bandgap semiconductor , layer (electronics) , active layer , carrier generation and recombination , quantum well , charge carrier density , current density , carrier lifetime , band diagram , power (physics) , optics , laser , doping , band gap , semiconductor , silicon , physics , nanotechnology , quantum mechanics , voltage divider , thin film transistor
In this work, a novel carrier concentration adjusting insertion layer for InGaN/GaN multiple quantum wells light-emitting diodes was proposed to mitigate the efficiency droop and improve optical output properties at high current density. The band diagrams and carrier distributions were investigated numerically and experimentally. The results indicate that due to the newly formed electron barrier and the adjusted built-in field near the active region, the hole injection has been improved and a better radiative recombination can be achieved. Compared to the conventional LED, the light output power of our new structure with the carrier concentration adjusting layers is enhanced by 127% at 350 mA , while the efficiency only droops to be 88.2% of its peak efficiency
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