Structure and optical properties of aSiAl and aSiAlHx magnetron sputtered thin films
Author(s) -
Annett Thøgersen,
Marit Stange,
Ingvild Julie Thue Jensen,
Arne Røyset,
A. Ulyashin,
Spyros Diplas
Publication year - 2016
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.4944506
Subject(s) - materials science , band gap , amorphous solid , ellipsometry , thin film , x ray photoelectron spectroscopy , analytical chemistry (journal) , sputter deposition , silicon , refractive index , crystallization , amorphous silicon , transmission electron microscopy , sputtering , optoelectronics , crystallography , chemical engineering , crystalline silicon , nanotechnology , chemistry , chromatography , engineering
Thin films of homogeneous mixture of amorphous silicon and aluminum were produced with magnetron sputtering using 2-phase Al–Si targets. The films exhibited variable compositions, with and without the presence of hydrogen, aSi1−xAlx and aSi1−xAlxHy. The structure and optical properties of the films were investigated using transmission electron microscopy, X-ray photoelectron spectroscopy, UV-VisNIR spectrometry, ellipsometry, and atomistic modeling. We studied the effect of alloying aSi with Al (within the range 0–25 at. %) on the optical band gap, refractive index, transmission, and absorption. Alloying aSi with Al resulted in a non-transparent film with a low band gap (<1 eV). Hydrogenation of the films increased the band gap to values >1 eV. Variations of the Al and hydrogen content allowed for tuning of the optoelectronic properties. The films are stable up to a temperature of 300 °C. At this temperature, we observed Al induced crystallization of the amorphous silicon and the presence of large Al particles in a crystalline Si matrix
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