Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying In composition | Zendy

Wenyuan Jiao | Zendy; Wei Kong | Zendy; Jincheng Li | Zendy; Kristen Collar | Zendy; Tong-Ho Kim | Zendy; María Losurdo | Zendy; April S. Brown | Zendy

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Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying In composition

Author(s) -

Wenyuan Jiao,

Wei Kong,

Jincheng Li,

Kristen Collar,

Tong-Ho Kim,

María Losurdo,

April S. Brown

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4944502

Subject(s) - heterojunction , materials science , x ray photoelectron spectroscopy , molecular beam epitaxy , indium , valence band , wide bandgap semiconductor , optoelectronics , bowing , epitaxy , valence (chemistry) , analytical chemistry (journal) , condensed matter physics , band gap , nanotechnology , chemistry , physics , nuclear magnetic resonance , organic chemistry , layer (electronics) , chromatography , philosophy , theology

Angle-resolved X-ray photoelectron spectroscopy (XPS) is used in this work to experimentally determine the valence band offsets of molecular beam epitaxy (MBE)-grown InAlN/GaN heterostructures with varying indium composition. We find that the internal electric field resulting from polarization must be taken into account when analyzing the XPS data. Valence band offsets of 0.12 eV for In0.18Al0.82N, 0.15 eV for In0.17Al0.83N, and 0.23 eV for In0.098Al0.902N with GaN are obtained. The results show that a compositional-depended bowing parameter is needed in order to estimate the valence band energies of InAlN as a function of composition in relation to those of the binary endpoints, AlN and InN

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