Angle-dependent bandgap engineering in gated graphene superlattices | Zendy

Heraclio García-Cervantes | Zendy; L.M. GaggeroSager | Zendy; Oscar Sotolongo-Costa | Zendy; Gerardo G. Naumis | Zendy; I. RodríguezVargas | Zendy

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Angle-dependent bandgap engineering in gated graphene superlattices

Author(s) -

Heraclio García-Cervantes,

L.M. GaggeroSager,

Oscar Sotolongo-Costa,

Gerardo G. Naumis,

I. RodríguezVargas

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4944495

Subject(s) - graphene , superlattice , condensed matter physics , anisotropy , band gap , dirac (video compression format) , dispersion (optics) , electron , dispersion relation , materials science , physics , optics , nanotechnology , quantum mechanics , neutrino

Graphene Superlattices (GSs) have attracted a lot of attention due to its peculiar properties as well as its possible technological implications. Among these characteristics we can mention: the extra Dirac points in the dispersion relation and the highly anisotropic propagation of the charge carriers. However, despite the intense research that is carried out in GSs, so far there is no report about the angular dependence of the Transmission Gap (TG) in GSs. Here, we report the dependence of TG as a function of the angle of the incident Dirac electrons in a rather simple Electrostatic GS (EGS). Our results show that the angular dependence of the TG is intricate, since for moderated angles the dependence is parabolic, while for large angles an exponential dependence is registered. We also find that the TG can be modulated from meV to eV, by changing the structural parameters of the GS. These characteristics open the possibility for an angle-dependent bandgap engineering in graphene

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