Open AccessElectrical degradation of double-Schottky barrier in ZnO varistors
Author(s) -
Jinliang He,
Chenlu Cheng,
Jun Hu
Publication year - 2016
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4944485
Subject(s) - varistor , degradation (telecommunications) , schottky barrier , materials science , schottky diode , crystallographic defect , engineering physics , optoelectronics , nanotechnology , electronic engineering , electrical engineering , condensed matter physics , physics , engineering , voltage , diode
Researches on electrical degradation of double-Schottky barrier in ZnO varistors are reviewed, aimed at the constitution of a full picture of universal degradation mechanism within the perspective of defect. Recent advances in study of ZnO materials by atomic-scale first-principles calculations are partly included and discussed, which brings to our attention distinct cognition on the native point defects and their profound impact on degradation
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