Pressure induced increase of the exciton phonon interaction in ZnO/(ZnMg)O quantum wells
Author(s) -
Dawid Jarosz,
H. Teisseyre,
Agata Kamińska,
A. Suchocki,
A. Kozanecki
Publication year - 2016
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4943677
Subject(s) - phonon , condensed matter physics , exciton , electric field , quantum well , piezoelectricity , coupling (piping) , materials science , quantum , physics , quantum mechanics , composite material , laser , metallurgy
It is a well-established experimental fact that exciton-phonon coupling is very efficient in ZnO. The intensities of the phonon-replicas in ZnO/(ZnMg)O quantum structures strongly depend on the internal electric field. We performed high-pressure measurements on the single ZnO/(ZnMg)O quantum well. We observed a strong increase of the intensity of the phonon-replicas relative to the zero phonon line. In our opinion this effect is related to pressure induced increase of the strain in quantum structure. As a consequence, an increase of the piezoelectric component of the electric field is observed which leads to an increase of the intensity of the phonon-replicas
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