Magnetic and magneto-transport studies of substrate effect on the martensitic transformation in a NiMnIn shape memory alloy
Author(s) -
Andrei Sokolov,
Eugene Kirianov,
A A Zlenko,
Abdiel Quetz,
Anil Aryal,
Sudip Pandey,
Igor Dubenko,
Shane Stadler,
Naushad Ali,
Nabil Al-Aqtash,
Renat Sabirianov
Publication year - 2016
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4943537
Subject(s) - materials science , ferrimagnetism , condensed matter physics , martensite , austenite , ferromagnetism , thin film , diffusionless transformation , substrate (aquarium) , molecular beam epitaxy , alloy , lattice constant , epitaxy , magnetization , metallurgy , diffraction , composite material , nanotechnology , magnetic field , optics , microstructure , physics , oceanography , layer (electronics) , quantum mechanics , geology
The effect of substrates on the magnetic and transport properties of Ni2Mn1.5In0.5 ultra-thin films were studied theoretically and experimentally. High quality 8-nm films were grown by laser-assisted molecular beam epitaxy deposition. Magneto-transport measurements revealed that the films undergo electronic structure transformation similar to those of bulk materials at the martensitic transformation. The temperature of the transformation depends strongly on lattice parameters of the substrate. To explain this behavior, we performed DFT calculations on the system and found that different substrates change the relative stability of the ferromagnetic (FM) austenite and ferrimagnetic (FiM) martensite states. We conclude that the energy difference between the FM austenite and FiM martensite states in Ni2Mn1.5In0.5 films grown on MgO (001) substrates is ΔE = 0.20 eV per NiMnIn f.u, somewhat lower compared to ΔE = 0.24 eV in the bulk material with the same lattice parameters. When the lattice parameters of Ni2Mn1.5In0.5 film have values close to those of the MgO substrate, the energy difference becomes ΔE = 0.08 eV per NiMnIn f.u. These results suggest the possibility to control the martensitic transition in thin films through substrate engineering
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