Theoretical analysis and experiment of subwavelength structure-integrated red AlGaInP light-emitting diodes for uniform field distribution and enhanced light extraction efficiency

We report theoretical and experimental analysis of antireflective subwavelength structures (SWSs) on GaP substrates to enhance the light output with a uniform light distribution of AlGaInP-based red light-emitting diodes (LEDs). Scaling issues on the optical performance are analyzed by the calculation results from finite-difference time-domain (FDTD) and rigorous coupled-wave analysis (RCWA) methods. The optical simulation reveals that SWSs with a period of 100–150 nm achieve highest optical output power, while maintaining a uniform light field distribution, in the subwavelength regime. To validate our theoretical results, disordered SWSs with a tapered shape were fabricated on a GaP layer of AlGaInP red LEDs by lithography-free dry etching of Ag nanoparticles. The SWS-integrated LED shows a uniform light output distribution with an improved light output power compared with the conventional LED