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We report theoretical and experimental analysis of antireflective subwavelength structures (SWSs) on GaP substrates to enhance the light output with a uniform light distribution of AlGaInP-based red light-emitting diodes (LEDs). Scaling issues on the optical performance are analyzed by the calculation results from finite-difference time-domain (FDTD) and rigorous coupled-wave analysis (RCWA) methods. The optical simulation reveals that SWSs with a period of 100–150 nm achieve highest optical output power, while maintaining a uniform light field distribution, in the subwavelength regime. To validate our theoretical results, disordered SWSs with a tapered shape were fabricated on a GaP layer of AlGaInP red LEDs by lithography-free dry etching of Ag nanoparticles. The SWS-integrated LED shows a uniform light output distribution with an improved light output power compared with the conventional LED

aip advances

Theoretical analysis and experiment of subwavelength structure-integrated red AlGaInP light-emitting diodes for uniform field distribution and enhanced light extraction efficiency