Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers | Zendy

Maëlis Piquemal-Banci | Zendy; Regina Galceran | Zendy; Sabina Caneva | Zendy; MarieBlandine Martin | Zendy; Robert S. Weatherup | Zendy; Piran R. Kidambi | Zendy; K. Bouzéhouane | Zendy; S. Arockia Edwin Xavier | Zendy; A. Anane | Zendy; F. Pétroff | Zendy; A. Fert | Zendy; John Robertson | Zendy; Stephan Hofmann | Zendy; Bruno Dlubak | Zendy; Pierre Sénéor | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers

Author(s) -

Maëlis Piquemal-Banci,

Regina Galceran,

Sabina Caneva,

MarieBlandine Martin,

Robert S. Weatherup,

Piran R. Kidambi,

K. Bouzéhouane,

S. Arockia Edwin Xavier,

A. Anane,

F. Pétroff,

A. Fert,

John Robertson,

Stephan Hofmann,

Bruno Dlubak,

Pierre Sénéor

Publication year - 2016

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4943516

Subject(s) - monolayer , materials science , hexagonal boron nitride , quantum tunnelling , chemical vapor deposition , magnetoresistance , tunnel magnetoresistance , homogeneity (statistics) , condensed matter physics , boron , boron nitride , thin film , nanotechnology , layer (electronics) , optoelectronics , chemistry , magnetic field , statistics , graphene , physics , mathematics , organic chemistry , quantum mechanics

We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into Co/h-BN/Fe magnetic tunnel junctions(MTJs). The h-BN monolayer is directly grown by chemical vapor deposition on Fe. The Conductive Tip Atomic Force Microscopy (CT-AFM) measurements reveal the homogeneity of the tunnel behavior of our h-BN layers. As expected for tunneling, the resistance depends exponentially on the number of h-BN layers. The h-BN monolayer properties are also characterized through integration into complete MTJ devices. A Tunnel Magnetoresistance of up to 6% is observed for a MTJ based on a single atomically thin h-BN layer.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research