Open AccessReal-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by x-ray diffraction
Author(s) -
Hidetoshi Suzuki,
Yuka Nakata,
Masamitu Takahasi,
Kazuma Ikeda,
Yoshio Ohshita,
Osamu Morohara,
Hirotaka Geka,
Yoshitaka Moriyasu
Publication year - 2016
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4943511
Subject(s) - molecular beam epitaxy , nucleation , diffraction , crystallography , materials science , epitaxy , stacking fault , stacking , molecular beam , x ray crystallography , crystal growth , growth rate , monolayer , gallium arsenide , analytical chemistry (journal) , chemistry , optics , optoelectronics , layer (electronics) , dislocation , molecule , nanotechnology , geometry , physics , organic chemistry , chromatography , mathematics
The formation and evolution of rotational twin (TW) domains introduced by a stacking fault during molecular-beam epitaxial growth of GaAs on Si (111) substrates were studied by in situ x-ray diffraction. To modify the volume ratio of TW to total GaAs domains, GaAs was deposited under high and low group V/group III (V/III) flux ratios. For low V/III, there was less nucleation of TW than normal growth (NG) domains, although the NG and TW growth rates were similar. For high V/III, the NG and TW growth rates varied until a few GaAs monolayers were deposited; the mean TW domain size was smaller for all film thicknesses
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