Open AccessMaterial characteristics and equivalent circuit models of stacked graphene oxide for capacitive humidity sensors
Author(s) -
Kook In Han,
Seung Du Kim,
Woo Seok Yang,
Hyeong Seok Kim,
Myunghun Shin,
Jong Pil Kim,
In Gyu Lee,
Byung Jin Cho,
Wan Sik Hwang
Publication year - 2016
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4943509
Subject(s) - capacitive sensing , graphene , materials science , oxide , equivalent circuit , optoelectronics , electrical impedance , humidity , raman spectroscopy , diffraction , relative humidity , power consumption , power (physics) , nanotechnology , electrical engineering , voltage , physics , optics , engineering , metallurgy , thermodynamics , quantum mechanics
The oxidation properties of graphene oxide (GO) are systematically correlated with their chemical sensing properties. Based on an impedance analysis, the equivalent circuit models of the capacitive sensors are established, and it is demonstrated that capacitive operations are related to the degree of oxidation. This is also confirmed by X-ray diffraction and Raman analysis. Finally, highly sensitive stacked GO sensors are shown to detect humidity in capacitive mode, which can be useful in various applications requiring low power consumption
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