Open AccessHigh Ms Fe16N2 thin film with Ag under layer on GaAs substrate
Author(s) -
Xiaowei Zhang,
Yanfeng Jiang,
Meiyin Yang,
Lawrence F. Allard,
JianPing Wang
Publication year - 2016
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4943236
Subject(s) - materials science , x ray photoelectron spectroscopy , annealing (glass) , diffraction , sputtering , substrate (aquarium) , analytical chemistry (journal) , x ray crystallography , lattice constant , layer (electronics) , thin film , crystallography , magnetization , condensed matter physics , nuclear magnetic resonance , composite material , optics , chemistry , nanotechnology , magnetic field , physics , oceanography , chromatography , geology , quantum mechanics
(001) textured Fe16N2 thin film with Ag under layer is successfully grown on GaAs substrate using a facing target sputtering (FTS) system. After post annealing, chemically ordered Fe16N2 phase is formed and detected by X-ray diffraction (XRD). High saturation magnetization (Ms) is measured by a vibrating sample magnetometer (VSM). In comparison with Fe16N2 with Ag under layer on MgO substrate and Fe16N2 with Fe under layer on GaAs substrate, the current layer structure shows a higher Ms value, with a magnetically softer feature in contrast to the above cases. In addition, X-ray photoelectron spectroscopy (XPS) is performed to characterize the binding energy of N atoms. To verify the role of strain that the FeN layer experiences in the above three structures, Grazing Incidence X-ray Diffraction (GIXRD) is conducted to reveal a large in-plane lattice constant due to the in-plane biaxial tensile strain
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom