Open AccessErratum: “Hot-carrier-induced linear drain current and threshold voltage degradation for thin layer silicon-on-insulator field P-channel lateral double-diffused metal-oxide-semiconductor” [Appl. Phys. Lett. 107, 203507 (2015)]
Author(s) -
Xin Zhou,
Ming Qiao,
Yitao He,
Zhaoji Li,
Bo Zhang
Publication year - 2016
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4943206
Subject(s) - materials science , optoelectronics , silicon , threshold voltage , degradation (telecommunications) , semiconductor , layer (electronics) , metal , silicon on insulator , insulator (electricity) , oxide , voltage , nanotechnology , electrical engineering , transistor , engineering , metallurgy
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