Determination of the electric field induced anisotropy change in sub-100 nm perpendicularly magnetized devices | Zendy

Jiancheng Huang | Zendy; Michaël Tran | Zendy; Sze Ter Lim | Zendy; Aihong Huang | Zendy; Chuyi Yang | Zendy; Qi Jia Yap | Zendy; Guchang Han | Zendy

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Determination of the electric field induced anisotropy change in sub-100 nm perpendicularly magnetized devices

Author(s) -

Jiancheng Huang,

Michaël Tran,

Sze Ter Lim,

Aihong Huang,

Chuyi Yang,

Qi Jia Yap,

Guchang Han

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4942822

Subject(s) - anisotropy , electric field , condensed matter physics , magnetization , materials science , field (mathematics) , magnetic anisotropy , voltage , perpendicular , yield (engineering) , measure (data warehouse) , magnetic field , optoelectronics , physics , optics , computer science , geometry , mathematics , quantum mechanics , pure mathematics , metallurgy , database

We measure the voltage or electric field (EF) modulated change in anisotropy using two methods on the same nanometer sized device: 1) Directly using the area of the hard axis magnetization loop and 2) Indirectly using the switching field distribution method. Both methods yield similar values of efficiency. With the indirect method, the efficiency derived from the thermal stability was found to be more consistent than that from the anisotropy field. Our data also suggests that memory devices that rely solely on EF effects may benefit from larger device sizes

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