CuO/ZnO memristors via oxygen or metal migration controlled by electrodes | Zendy

Yong Huang | Zendy; Zihan Shen | Zendy; Ye Wu | Zendy; Meiqiu Xie | Zendy; Yanqiang Hu | Zendy; Shufang Zhang | Zendy; Xiaoqin Shi | Zendy; Haibo Zeng | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

CuO/ZnO memristors via oxygen or metal migration controlled by electrodes

Author(s) -

Yong Huang,

Zihan Shen,

Ye Wu,

Meiqiu Xie,

Yanqiang Hu,

Shufang Zhang,

Xiaoqin Shi,

Haibo Zeng

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4942477

Subject(s) - electrode , materials science , memristor , bilayer , oxygen , resistive random access memory , metal , voltage , electrochemistry , electrical resistivity and conductivity , resistive touchscreen , optoelectronics , nanotechnology , chemistry , electrical engineering , metallurgy , membrane , organic chemistry , engineering , biochemistry

We carry out a comparative study on resistive switching in CuO/ZnO bilayer films; both samples grown Pt and Ag electrodes show bipolar switching behaviors. The two kinds of current-voltage curves reveal the different resistive switching behaviors in Pt/CuO/ZnO/Pt and Ag/CuO/ZnO/Pt, respectively. We conjecture that the formation and rupture of conducting filaments are responsible for the switching effect. Filaments induced by migration of oxygen ions are responsible for resistive switching with the Pt electrode. In contrast, resistive switching with the Ag electrode is attributed to the migration of metal cations and the corresponding electrochemical metallization. It is also inferred that the characteristic nature of the conducting filaments influences many aspects of switching characteristics, including the switching voltages and cycling variations at room temperature

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research