Open AccessErratum: “Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states” [Appl. Phys. Lett. 106, 152104 (2015)]
Author(s) -
Junjie Wang,
Daniel Rhodes,
Simin Feng,
Minh Nguyen,
Kenji Watanabe,
Takashi Taniguchi,
Thomas E. Mallouk,
Mauricio Terrones,
Luis Balicas,
Jing Zhu
Publication year - 2016
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4941993
Subject(s) - conductance , schottky barrier , transistor , condensed matter physics , field effect transistor , impurity , schottky diode , materials science , physics , optoelectronics , quantum mechanics , voltage , diode
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