The structural properties of InGaN alloys and the interdependence on the thermoelectric behavior | Zendy

Bahadir Küçükgök | Zendy; Xuewang Wu | Zendy; Xiaojia Wang | Zendy; Zhiqiang Liu | Zendy; Ian T. Ferguson | Zendy; Na Lü | Zendy

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The structural properties of InGaN alloys and the interdependence on the thermoelectric behavior

Author(s) -

Bahadir Küçükgök,

Xuewang Wu,

Xiaojia Wang,

Zhiqiang Liu,

Ian T. Ferguson,

Na Lü

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4941934

Subject(s) - thermoelectric effect , materials science , alloy , indium , figure of merit , chemical vapor deposition , nitride , thermoelectric materials , seebeck coefficient , thermal stability , condensed matter physics , optoelectronics , metallurgy , thermodynamics , thermal conductivity , chemical engineering , composite material , physics , layer (electronics) , engineering

The III-Nitrides are promising candidate for high efficiency thermoelectric (TE) materials and devices due to their unique features which includes high thermal stability. A systematic study of the room temperature TE properties of metalorganic chemical vapor deposition grown InxGa1-xN were investigated for x = 0.07 to 0.24. This paper investigated the role of indium composition on the TE properties of InGaN alloys in particular the structural properties for homogenous material that did not show significant phase separation. The highest Seebeck and power factor values of 507 μV K−1 and 21.84 × 10−4 Wm−1K−1 were observed, respectively for In0.07Ga0.93N at room temperature. The highest value of figure-of-merit (ZT) was calculated to be 0.072 for In0.20Ga0.80N alloy at room temperature

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