Reverse degradation of nickel graphene junction by hydrogen annealing | Zendy

Zhenjun Zhang | Zendy; Fan Yang | Zendy; Pratik Agnihotri | Zendy; Ji Ung Lee | Zendy; J. R. Lloyd | Zendy

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Reverse degradation of nickel graphene junction by hydrogen annealing

Author(s) -

Zhenjun Zhang,

Fan Yang,

Pratik Agnihotri,

Ji Ung Lee,

J. R. Lloyd

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4941572

Subject(s) - graphene , annealing (glass) , materials science , nickel , fabrication , hydrogen , quantum tunnelling , degradation (telecommunications) , contact resistance , chemical engineering , metal , nanotechnology , optoelectronics , metallurgy , chemistry , electronic engineering , organic chemistry , engineering , medicine , alternative medicine , pathology , layer (electronics)

Metal contacts are fundamental building components for graphene based electronic devices and their properties are greatly influenced by interface quality during device fabrication, leading to resistance variation. Here we show that nickel graphene junction degrades after air exposure, due to interfacial oxidation, thus creating a tunneling barrier. Most importantly, we demonstrate that hydrogen annealing at moderate temperature (300 0C) is an effective technique to reverse the degradation

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