Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes | Zendy

Milan Pešić | Zendy; Steve Knebel | Zendy; Maximilian Geyer | Zendy; Sebastian Schmelzer | Zendy; U. Böttger | Zendy; Nadiia Kolomiiets | Zendy; Valeri Afanas’ev | Zendy; Kyuho Cho | Zendy; Changhwa Jung | Zendy; Jaewan Chang | Zendy; Hanjin Lim | Zendy; Thomas Mikolajick | Zendy; Uwe Schroeder | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes

Author(s) -

Milan Pešić,

Steve Knebel,

Maximilian Geyer,

Sebastian Schmelzer,

U. Böttger,

Nadiia Kolomiiets,

Valeri Afanas’ev,

Kyuho Cho,

Changhwa Jung,

Jaewan Chang,

Hanjin Lim,

Thomas Mikolajick,

Uwe Schroeder

Publication year - 2016

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.4941537

Subject(s) - dram , capacitance , capacitor , dynamic random access memory , leakage (economics) , materials science , stack (abstract data type) , scaling , dielectric , optoelectronics , tin , electronic engineering , electrode , electrical engineering , computer science , voltage , semiconductor memory , engineering , metallurgy , physics , geometry , mathematics , quantum mechanics , economics , macroeconomics , programming language

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research